FDSOI Molecular Flash Cell with Reduced Variability for Low Power Flash Applications

Georgiev, V. P. , Amoroso, S. M., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2014) FDSOI Molecular Flash Cell with Reduced Variability for Low Power Flash Applications. In: 44th European Solid-State Device Research Conference (ESSDERC), Venice, Italy, 22-26 Sep 2014, pp. 353-356. ISBN 9781479943760 (doi:10.1109/ESSDERC.2014.6948833)

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Abstract

In this work we present a modeling study of a conceptual low power non-volatile memory cell based on inorganic molecular metal oxide clusters (polyoxometalates (POM)) as a storage media embedded in the gate dielectric of a Fully Depleted SOI (FD SOI) with reduced statistical variability. The simulations were carried out using a multi-physics simulation framework, which allows us to evaluate the variability in the programming window of the molecular based flash cell with an 18 nm gate length. We have focused our study on the threshold voltage variability influenced by random dopant fluctuations and random special fluctuations of the molecules in the floating gate of the flash-cell. Our simulation framework and conclusions can be applied not only to POM-based flash cell but also to flash cells based on alternative molecules used as a storage media.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Busche, Dr Christoph and Asenov, Professor Asen and Vila-Nadal, Dr Laia and Cronin, Professor Leroy and Amoroso, Dr Salvatore and Georgiev, Dr Vihar
Authors: Georgiev, V. P., Amoroso, S. M., Vila-Nadal, L., Busche, C., Cronin, L., and Asenov, A.
College/School:College of Science and Engineering > School of Chemistry
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:1930-8876
ISBN:9781479943760
Copyright Holders:Copyright © 2014 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
503291Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular LimitLeroy CroninEngineering & Physical Sciences Research Council (EPSRC)EP/H024107/1CHEM - CHEMISTRY
503295Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular LimitLeroy CroninEngineering & Physical Sciences Research Council (EPSRC)EP/H024107/1CHEM - CHEMISTRY