FDSOI Molecular Flash Cell with Reduced Variability for Low Power Flash Applications

Georgiev, V. P. , Amoroso, S. M., Vila-Nadal, L. , Busche, C. , Cronin, L. and Asenov, A. (2014) FDSOI Molecular Flash Cell with Reduced Variability for Low Power Flash Applications. In: 44th European Solid-State Device Research Conference (ESSDERC), Venice, Italy, 22-26 Sep 2014, pp. 353-356. ISBN 9781479943760 (doi: 10.1109/ESSDERC.2014.6948833)

Abstract

In this work we present a modeling study of a conceptual low power non-volatile memory cell based on inorganic molecular metal oxide clusters (polyoxometalates (POM)) as a storage media embedded in the gate dielectric of a Fully Depleted SOI (FD SOI) with reduced statistical variability. The simulations were carried out using a multi-physics simulation framework, which allows us to evaluate the variability in the programming window of the molecular based flash cell with an 18 nm gate length. We have focused our study on the threshold voltage variability influenced by random dopant fluctuations and random special fluctuations of the molecules in the floating gate of the flash-cell. Our simulation framework and conclusions can be applied not only to POM-based flash cell but also to flash cells based on alternative molecules used as a storage media.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Busche, Dr Christopher and Amoroso, Dr Salvatore and Asenov, Professor Asen and Vila-Nadal, Dr Laia and Cronin, Professor Lee and Georgiev, Professor Vihar
• Authors: Georgiev, V. P., Amoroso, S. M., Vila-Nadal, L., Busche, C., Cronin, L., and Asenov, A.
• College/School: College of Science and Engineering > School of Chemistry; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 1930-8876
• ISBN: 9781479943760
• Copyright Holders: Copyright © 2014 IEEE
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.

Related URLs

• Organisation

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
50329	1	Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit	Leroy Cronin	Engineering & Physical Sciences Research Council (EPSRC)	EP/H024107/1	CHEM - CHEMISTRY
50329	5	Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit	Leroy Cronin	Engineering & Physical Sciences Research Council (EPSRC)	EP/H024107/1	CHEM - CHEMISTRY