Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study

Georgiev, V. P. , Amoroso, S. M., Ali, T. M., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2015) Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study. IEEE Transactions on Electron Devices, 62(2), pp. 680-684. (doi:10.1109/TED.2014.2378378)

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Abstract

In this brief, we present a multiscale simulation study of a fully depleted silicon-on-insulator (FDSOI) nonvolatile memory cell based on polyoxometalates (POMs) inorganic molecular clusters used as a storage media embedded in the gate dielectric of flash cells. In particular, we focus our discussion on the threshold voltage variability introduced by random discrete dopants (random dopant fluctuation) and by fluctuations in the distribution of the POM molecules in the storage media (POM fluctuation). To highlight the advantages of the FDSOI POM flash cell, we provide a comparison with an equivalent cell based on conventional (BULK) transistors. The presented simulation framework and methodology is transferrable to flash cells based on alternative molecules used as a storage media.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Busche, Dr Christoph and Asenov, Professor Asen and Vila-Nadal, Dr Laia and Cronin, Professor Leroy and Amoroso, Dr Salvatore and Georgiev, Dr Vihar
Authors: Georgiev, V. P., Amoroso, S. M., Ali, T. M., Vila-Nadal, L., Busche, C., Cronin, L., and Asenov, A.
College/School:College of Science and Engineering > School of Chemistry
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):0018-9383
Copyright Holders:Copyright © 2015 IEEE
First Published:First published in IEEE Transactions on Electron Devices 62(2):680-684
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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