An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements

Wasige, E. , Sheinman, B., Sidorov, V., Cohen, S. and Ritter, D. (2002) An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements. In: 2002 IEEE MTT-S International Microwave Symposium, Seattle, WA, USA, 02-07 Jun 2002, pp. 733-736. (doi:10.1109/MWSYM.2002.1011733)

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Publisher's URL: http://dx.doi.org/10.1109/MWSYM.2002.1011733

Abstract

Direct extraction is the most accurate method for the determination of equivalent-circuits of heterojunction bipolar transistors (HBTs). However, previous work lacks an exact expression for the extrinsic base-collector capacitance, which models the distributed nature of the base. This paper gives the derivation of an exact expression for this capacitance. As a result, each intrinsic equivalent-circuit parameter is determined using a simple exact expression at each measured frequency. The expression is valid for both the hybrid- /spl pi/ and the physics-based T-topology equivalent circuits. Extraction results for InP- and GaAs-HBTs are given.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward
Authors: Wasige, E., Sheinman, B., Sidorov, V., Cohen, S., and Ritter, D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:0149-645X

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