IV characteristics of resonant tunnelling diodes investigated by a numerical model based on semiconductor physics

Wang, J. and Wasige, E. (2013) IV characteristics of resonant tunnelling diodes investigated by a numerical model based on semiconductor physics. In: 22nd European Workshop on Heterostructure Technology (HETECH), Glasgow, UK, 9-11 Sep 2013,

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Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Wang, Dr Jue
Authors: Wang, J., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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