A novel high performance AlGaN/GaN based enhancement-mode metal-oxide-semiconductor high electron mobility transistor

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S. and Wasige, E. (2013) A novel high performance AlGaN/GaN based enhancement-mode metal-oxide-semiconductor high electron mobility transistor. In: 10th International Conference on Nitride Semiconductors, Washington, D.C., USA, 25-30 Aug 2013,

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Publisher's URL: http://www.mrs.org/icns-10/

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Taking, Miss Sanna and Brown, Mr Raphael and Macfarlane, Mr Douglas and Al-Khalidi, Dr Abdullah
Authors: Brown, R., Al-Khalidi, A., Macfarlane, D., Taking, S., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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