Effect of O2 plasma pre-treatment in Al2O3 passivation using atomic-layer-deposited on GaN based metal-oxide-semiconductor capacitor

Cho, S.-J., Roberts, J.W., Li, X. , Ternent, G., Floros, K., Thayne, I., Chalker, P. and Wasige, E. (2014) Effect of O2 plasma pre-treatment in Al2O3 passivation using atomic-layer-deposited on GaN based metal-oxide-semiconductor capacitor. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 184.

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Publisher's URL: http://ssg.sheffield.ac.uk/events/uk-semiconductors-2014/

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Li, Dr Xu and Cho, Dr Sungjin and Thayne, Professor Iain and Ternent, Dr Gary
Authors: Cho, S.-J., Roberts, J.W., Li, X., Ternent, G., Floros, K., Thayne, I., Chalker, P., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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