0.25 Ω-mm Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation

Al-Khalidi, A. , Gallacher, K., Khalid, A. , Paul, D. and Wasige, E. (2014) 0.25 Ω-mm Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: 7th Wide Band Gap Semiconductors and Components Workshop, Frascati, Italy, 11-12 Sep 2014,

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Publisher's URL: http://congrexprojects.com/2014-events/14c10/home

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Khalid, Dr Ata-ul-Habib and Paul, Professor Douglas and Gallacher, Dr Kevin and Al-Khalidi, Dr Abdullah
Authors: Al-Khalidi, A., Gallacher, K., Khalid, A., Paul, D., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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