W-band InP-based resonant tunnelling diode oscillator with milliwatt output power

Wang, J., Wang, L., Li, C. , Alharbi, K., Khalid, A. and Wasige, E. (2014) W-band InP-based resonant tunnelling diode oscillator with milliwatt output power. In: 26th International Conference on Indium Phosphide and Related Materials, Montpelier, France, 11-15 May 2014, pp. 1-2. (doi:10.1109/ICIPRM.2014.6880531)

Wang, J., Wang, L., Li, C. , Alharbi, K., Khalid, A. and Wasige, E. (2014) W-band InP-based resonant tunnelling diode oscillator with milliwatt output power. In: 26th International Conference on Indium Phosphide and Related Materials, Montpelier, France, 11-15 May 2014, pp. 1-2. (doi:10.1109/ICIPRM.2014.6880531)

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Publisher's URL: http://dx.doi.org/10.1109/ICIPRM.2014.6880531

Abstract

This paper presents a high power (milliwatt) W-band resonant tunneling diode (RTD) oscillator. The oscillator circuit employs two RTD devices in parallel and operates at 75.2 GHz with -0.2 dBm (0.95 mW) output power. To the authors knowledge, this is the highest reported output power for an RTD oscillator at W-band.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Li, Dr Chong and Khalid, Dr Ata-ul-Habib and Wang, Dr Jue and Wang, Mr Liquan
Authors: Wang, J., Wang, L., Li, C., Alharbi, K., Khalid, A., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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