Remote soft-optical phonon scattering in Si nanowire FETs

Barker, J. R. and Martinez, A. (2014) Remote soft-optical phonon scattering in Si nanowire FETs. In: 2014 International Workshop on Computational Electronics (IWCE), Paris, France, 3-6 Jun 2014, pp. 1-3. (doi:10.1109/IWCE.2014.6865851)

Full text not currently available from Enlighten.

Publisher's URL: http://dx.doi.org/10.1109/IWCE.2014.6865851

Abstract

In this work we calculate the impact of remote SO phonon scattering on the transfer characteristics of gate-all-around Si nanowire transistors. The polar SO phonons are confined to the HfO2/Si interface. Nanowire transistors with two different cross-sections are considered. The results show that the impact on the drain current is of the same order and of the same importance as other commonly used bulk-type phonons.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Martinez, Dr Antonio
Authors: Barker, J. R., and Martinez, A.
College/School:College of Science and Engineering > School of Engineering

University Staff: Request a correction | Enlighten Editors: Update this record