Amoroso, S.M., Alexander, C.L., Markov, S., Roy, G. and Asenov, A. (2011) A mobility model correction for 'atomistic' drift-diffusion simulation. In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, 8-10 Sep 2011, pp. 279-282. ISBN 9781612844190 (doi: 10.1109/SISPAD.2011.6035023)
Full text not currently available from Enlighten.
Publisher's URL: http://dx.doi.org/10.1109/SISPAD.2011.6035023
Abstract
A comprehensive statistical investigation of the increase in resistance associated with charge trapping in `atomistic' simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the `atomistic' simulations is proposed to suppress the error related to the fictitious charge trapping.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Markov, Dr Stanislav and Alexander, Dr Craig and Amoroso, Dr Salvatore and Roy, Dr Gareth and Asenov, Professor Asen |
| Authors: | Amoroso, S.M., Alexander, C.L., Markov, S., Roy, G., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISBN: | 9781612844190 |
University Staff: Request a correction | Enlighten Editors: Update this record
Altmetric
Altmetric