A mobility model correction for 'atomistic' drift-diffusion simulation

Amoroso, S.M., Alexander, C.L., Markov, S., Roy, G. and Asenov, A. (2011) A mobility model correction for 'atomistic' drift-diffusion simulation. In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, 8-10 Sep 2011, pp. 279-282. ISBN 9781612844190 (doi:10.1109/SISPAD.2011.6035023)

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Publisher's URL: http://dx.doi.org/10.1109/SISPAD.2011.6035023

Abstract

A comprehensive statistical investigation of the increase in resistance associated with charge trapping in `atomistic' simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the `atomistic' simulations is proposed to suppress the error related to the fictitious charge trapping.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Markov, Dr Stanislav and Roy, Dr Gareth and Amoroso, Dr Salvatore and Asenov, Professor Asen and Alexander, Dr Craig
Authors: Amoroso, S.M., Alexander, C.L., Markov, S., Roy, G., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781612844190

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