Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage

Peralagu, U. , Li, X. , Ignatova, O. , Steer, M., Povey, I., Hurley, P. and Thayne, I. (2014) Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage. In: 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 10 - 13 Dec 2014,

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Publisher's URL: http://www.ieeesisc.org/

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Steer, Dr Matthew and Li, Dr Xu and Thayne, Professor Iain and Ignatova, Ms Olesya and Peralagu, Mr Uthayasankaran
Authors: Peralagu, U., Li, X., Ignatova, O., Steer, M., Povey, I., Hurley, P., and Thayne, I.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Ultrafast

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