Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes

Tian, P., McKendry, J. J.D., Herrnsdorf, J., Watson, S., Ferreira, R., Watson, I. M., Gu, E., Kelly, A. E. and Dawson, M. D. (2014) Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes. Applied Physics Letters, 105(171107), (doi:10.1063/1.4900865)

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Abstract

Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Watson, Dr Scott and Kelly, Professor Anthony
Authors: Tian, P., McKendry, J. J.D., Herrnsdorf, J., Watson, S., Ferreira, R., Watson, I. M., Gu, E., Kelly, A. E., and Dawson, M. D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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