High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

Wang, H., Yu, H., Zhou, X., Kan, Q., Yuan, L., Chen, W., Wang, W., Ding, Y. and Pan, J. (2014) High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission. Applied Physics Letters, 105(14), p. 141101. (doi: 10.1063/1.4897436)

Abstract

We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ∼51 nm at a center wavelength of 1060 nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

• Item Type: Articles
• Status: Published
• Refereed: No
• Glasgow Author(s) Enlighten ID: Ding, Dr Ying
• Authors: Wang, H., Yu, H., Zhou, X., Kan, Q., Yuan, L., Chen, W., Wang, W., Ding, Y., and Pan, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Applied Physics Letters
• Publisher: American Institute of Physics
• ISSN: 0003-6951
• ISSN (Online): 1077-3118